ICDT 2019 Display Electronics会议将于3月26-29日在昆山国际会展中心举办，本次会议的场地、现场会务以及设备保障均由昆山国际会展中心提供。

       时间：2019年3月26日-29日
       地点：昆山国际会展中心
       主办方：国际信息显示学会（SID）北京分会、台北分会、香港分会、科技部“战略性先进电子材料”总体专家组、东南大学、福州大学
       承办方：维信诺、SID China

       协办方：天马微电子股份有限公司、苏州育山科技协会

ICDT 2019 Display Electronics

       今年ICDT 2019 的Display Electronics领域有3 个session：

       1、High Performance Field-Effect Transistors 

       2、Display Driving Technology

       3、Novel Display Devices 

       Display Electronics领域有5篇邀请报告，7篇口头报告，13个海报报告，合计25篇。

赞助商：

Display Electronics 时间表

       02

       Technical Session

       Session 6： High Performance Field-Effect Transistors (Display Electronics)

       Wednesday, Mar. 27/8:30—9:50/ Meeting Room BC (1)

       Chair: Yongming Tang(汤勇明), Southeast University

       6.1 Invited Paper: Carbon Based Thin Film Transistors: Solution for High-Speed and HighFlexibility (8:30-8:50)

       Min Zhang (张敏), Peking University Shenzhen Graduate School

       6.2 Invited Paper: Organic-Inorganic Heterojunctions Towards Construction of High Performance Field Effect Transistors and their Applications (8:50-9:10)

       Chao Jiang(姜超), National Center for Nanoscience and Technology

       6.3 Invited Paper: Conformal Organic Field-Effect Transistor Array Fabricated by Photo-Lithography (9:10-9:30)

       Qingxin Tang(汤庆鑫), Northeast Normal University

       6.4 The Effect of LDD Structure on the Characteristics of TFT devices (9:30-9:50)

       Lin Xu, Visionox 

       Session 13： Display Driving Technology (Display Electronics)                                            

       Wednesday, Mar. 27/10:00-11:20/ Meeting Room BC (1)

       Chair: Zhongyuan Wu(吴仲远), BOE

       13.1 Invited Paper: Multigrid Back-projection Super–Resolution and Deep Filter Visualization (10:00-10:20)

       Guannan Chen (陈冠男), BOE

       13.2 Equalizer and Clock/Data Recovery Circuits in SDICs for Intra-Panel Interface (10:20-10:40)

       Zhengcai Qin, New Vision Micro Inc.

       13.3 A new pixel structure for OLEDoS micro-display (10:40-11:00)

       Aiying Guo, Shanghai university 

       13.4 Effects of VHR on the Flicker of Advanced Super Dimension Switching (ADS) Liquid Crystal Display (11:00-11:20)

       Zhiqiang Xu, BOE technology Group Co., LTD 

       Session 20： Novel Display Devices (Display Electronics)

       Thursday, Mar. 28/14:30—15:50/ Meeting Room BC (1)

       Chair: Xiujian Zhu(朱修剑)，Visionox   

       20.1 Invited Paper: Monolithic Quantum Dot Nanoring Micro LEDs with Improved Efficiency  Using Atomic Layer Deposition and Nonradiative Resonant Energy Transfer (14:30-14:50)

       Hao-Chung Kuo (郭浩中), National Chiao Tung University

       20.2 To Improve Electroluminescence by Tuning Quantum Dots Structure (14:50-15:10)

       Wenyong Liu, TCL inc. 

       20.3 Multifunctional device with an integration of light emitting, photo detective, and energy harvesting (15:10-15:30)

       Guijun Li, The Hong Kong University of Science and Technology

       20.4 High-transmission Transparent LCD Display with Multiple Optimization Algorithms (15:30-15:50)

       Yugang Bao, CSOT 

       02

       Poster Session

       P 5. Display Electronics

       P 5.1 Enhanced Nickel Oxide Hole Injection Layer via the rGO Combustion Method for Perovskite QDs Light-Emitting Diodes  

       Xiyuan Liu, Peking University Shenzhen Graduate School, Shenzhen, China

       P 5.2 Negative bias illumination stress stability of Sr-doped aqueous In2O3-TFT    

       Youhang Zhou, 

       P 5.3 Design of Amorphous Silicon Thin-Film Transistor Gate Driver Circuit with High Reliability and Narrow Border for Middle Size Liquid Crystal Display  

       Jhongciao Ke, Shanghai Jiao Tong University, InfoVision Optoelectronics (Kunshan) Co., Ltd

       P 5.4 Processing Effects on the Performances of Indium Zinc Bismuth Oxide Thin Film Transistors  

       Dong Lin, Fudan University

       P 5.5 High performance indium oxide thin-film transistors with aluminum oxide passivation    

       fukai Shan, Qingdao University

       P 5.6 High performance solution-processed p-type NdAlO3 semiconductor thin films and their application in  ransistors   

       fukai Shan, Qingdao University

       P 5.7 Low-temperature, nontoxic indium oxide nanofibers and their application in field-effect transistors  

       fukai Shan, Qingdao University

       P 5.8 High-performance field effect transistor based on welded In2O3 nanobelts with low temperature process  

       fukai Shan, Qingdao University

       P 5.9 Low temperature, solution-processed In2O3 synaptic transistors for brain-inspired neuromorphic applications  

       fukai Shan, Qingdao University

       P 5.10 Lifetime Prediction Model for Microcapsule Electrophoretic Display Device Based on High Temperature and High humidity Test   

       Mi Wu 

       P 5.11 Research on the effect of simplified structure of mini-LED backlight module on luminous efficiency  

       Zhang Bing, Hefei BOE Optoelectronics Technology Co., Ltd

       P 5.12 Training Multi-scale Networks for Compression Artifacts Reduction  

       Deng Yufang, Shenzhen China Star Optoelectronics Technology Co., Ltd

       P 5.13 Visual Luminance Uniformity and OD value calculation for Direct Type MiniLED Backlight  

       Chang Kangle, Beijing BOE Optoelectronics Technology Co., Ltd 

Display Electronics部分报告人简介

——以下信息由专家本人提供

       张敏

       张敏，博士，北京大学深圳研究生院信息工程学院副教授，深圳市海外高层次人才“孔雀计划”B类人才。香港科技大学电子及计算机工程学系博士。博士毕业后加入香港半导体业界从事集成电路先进器件的设计开发。曾负责和参与国家科技重大专项02专项课题等项目。2012年加入北京大学信息工程学院, 目前作为项目负责人承担国家自然科学基金、深圳市科创委创新创业专项、基础研究布局项目等数项。 以第一及通讯作者发表SCI及EI检索国际论文60余篇。主要研究方向包括纳米电子器件、柔性可拉伸器件、纳米能源及传感器件、微显示技术。任Nanoscale, IEEE Electron Device Letters， IEEE Transaction on Nanotechnology 等十多个期刊和会议的审稿人，是深圳市科技创新委员会、深圳市发展改革委员会等部门的项目评审专家，曾任IEEE-Shenzhen chapter财长。

       江潮

       江潮,研究员，博士生导师。中科院“百人计划”择优支持入选者。1986年毕业于北京大学物理系，获学士学位。1998年获中国科学院半导体研究所工学博士学位。曾于1998年至2005年先后在日本北海道大学和东京大学从事博士后研究。近年主持国家自然科学基金仪器专项及多个面上项目等。获北京市科学技术三等奖（2016）一项。在国际科技期刊发表SCI收录文章110余篇，被引1300余次。主要研究方向：1.高速有机小分子场效应晶体管制备及导电和稳定性机理研究 2.有机柔性电子器件大面积制备工艺及电路集成研究。

       Qingxin Tang

       Prof. Qingxin Tang is a full professor and doctoral supervisor in Northeast Normal University. He received his PhD in Institute of Chemistry in Chinese Academy of Sciences and was funded by the National Science Fund for Excellent Young Scholars since 2013. He is interested in flexible and wearable organic electronics and his research focuses on the flexible organic integrated circuit fabricated by photo-lithography, carrier transport mechanism in organic field-effect devices and flexible field-effect sensors. His doctoral dissertation is one of the National Excellent 100 Doctoral Dissertation in 2009. He was also awarded the Special award for President of the Chinese academy of sciences in 2007, the Chang-bai Mountain Scholar in 2007 and National Natural Science Award (second class) in 2016. He has published 90 research papers, including papers published in Advanced Materials, JACS and IEEE EDL, which have been cited over 1700 times. He also has 9 Chinese invention patents and 2 US invention patents.

       题外话

       ICDT 2019目前有包括3位院士在内的16位国内外顶尖专家带来精彩的主题报告。另外有涵盖17个技术领域的450多个技术研讨会报告。今年的报告数相比去年增长20%，预计参会人员规模将达到1100人。还有：车载显示论坛、创新项目路演式的投资会议、4个显示技术短期课程，6个专题技术讲座，商业会议，共约500个报告。另外有与当地政府互动的圆桌论坛、显示未来之星、显示行业中的女性活动、技术委员会议。同时今年的展区规模进一步加大，参与竞争中国区的显示产品奖的产品和显示创新技术奖的样机和样品也将在展区中展示。国家科技部高度重视这次会议，科技部高技术研究发展中心卞曙光副主任，科技部高技术研究发展中心杨斌专项主管都将莅临现场；除了3位主题演讲嘉宾许祖彦院士、刘明院士、支志明院士之外，郑有炓院士也将莅临现场指导。